Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures.

ABSTRACT: This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cryogenic conditions. Nanothin 3C-SiC films with a carrier concentration of 2 × 10¹⁹ cm^-3 were epitaxially grown on a Si substrate using the LPCVD process, followed by photolithography and UV laser engraving processes to form SiC-on-Si pressure sensors. The magnitude of the piezoresistive effect was measured by monitoring the change of the SiC conductance subjected to pressurizing/depressurizing cycles at different temperatures. Experimental results showed a relatively stable piezoresistive effect in the highly doped 3C-SiC film with the gauge factor slightly increased by 20% at 150 K with respect to that at room temperature. The data was also in good agreement with theore

SUBMITTER: Phan HP 

PROVIDER: S-EPMC9085268 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature