Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters.

ABSTRACT: Recently, much attention has been paid to the investigation of solution-driven oxides for application in thin film transistors (TFTs). In current study, a fully solution-based method, using 2-methoxyethanol as solvent, has been adopted to prepare InZnO thin films and HfAlO _x gate dielectrics. Amorphous HfAlO _x thin films annealed at 600 °C have shown a high transparency (>85%), low leakage current density (6.9 × 10^-9 A cm^-2 at 2 MV cm^-1), and smooth surface. To verify the potential applications of HfAlO _x gate dielectrics in oxide-based TFTs, fully solution-induced InZnO/HfAlO _x TFTs have been integrated. Excellent electrical performance for InZnO/HfAlO _x TFTs annealed

SUBMITTER: He G 

PROVIDER: S-EPMC9088822 | biostudies-literature | 2018 Oct

REPOSITORIES: biostudies-literature