AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al _x Ga_2-x O₃ Sidewalls.

ABSTRACT: AlGaN and GaN sidewalls were turned into Al _x Ga_2-x O₃ and Ga₂O₃, respectively, by thermal oxidation to improve the optoelectrical characteristics of deep ultraviolet (DUV) light-emitting diodes (LEDs). The thermally oxidized Ga₂O₃ is a single crystal with nanosized voids homogenously distributed inside the layer. Two oxidized Al _x Ga_2-x O₃ layers were observed on the sidewall of the AlGaN layer in transmission electron microscopy images. The first oxidized Al _x Ga_2-x O₃ layer is a single crystal, while the second oxidized Al _x Ga_2-xO₃ layer is a single crystal with nu

SUBMITTER: Wang TY 

PROVIDER: S-EPMC9089337 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature