High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure.

ABSTRACT: Mechanically flexible optoelectronic devices and systems can enable a much broader range of applications than what their rigid counterparts can do, especially for novel bio-integrated optoelectronic systems, flexible consumer electronics and wearable sensors. Inorganic semiconductor could be a good candidate for the flexible PD when it can keep its high performance under the bending condition. Here, we demonstrate a III-V material-based flexible photodetector operating wavelength from 640 to 1700 nm with the high detectivity of 5.18 × 10¹¹ cm‧Hz^1/2/W and fast response speed @1550 nm by using a simply top-to-down fabrication process. The optoelectrical performances are stable as the PDs are exposed to bending cycles with a radius of 15 mm up to 1000 times. Furthermore,

SUBMITTER: Li X 

PROVIDER: S-EPMC9090829 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature