Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities.

ABSTRACT: Electrochemical metallization memory (ECM) devices have been made by sub-stoichiometric deposition of a tantalum oxide switching film (Ta₂O_5-x ) using sputtering. We investigated the influence of zirconium as the active top electrode material in the lithographically fabricated ECM devices. A simple capacitor like (Pt/Zr/Ta₂O_5-x /Pt) structure represented the resistive switching memory. A cyclic voltammetry measurement demonstrated the electrochemical process of the memory device. The I-V characteristics of ECMs show stable bipolar resistive switching properties with reliable endurance and retention. The resistive switching mechanism results from the formation and rupture of a conductive filament characteristic of ECM.

SUBMITTER: Raeis-Hosseini N 

PROVIDER: S-EPMC9092617 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature