Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf_0.5Zr_0.5O₂.

ABSTRACT: Ferroelectric hafnium oxide thin films-the most promising materials in microelectronics' non-volatile memory-exhibit both unconventional ferroelectricity and unconventional piezoelectricity. Their exact origin remains controversial, and the relationship between ferroelectric and piezoelectric properties remains unclear. We introduce a new method to investigate this issue, which consists in a local controlled modification of the ferroelectric and piezoelectric properties within a single Hf_0.5Zr_0.5O₂ capacitor device through local doping and a further comparative nanoscopic analysis of the modified regions. By comparing the ferroelectric properties of Ga-doped Hf_0.5Zr_0.5O₂ thin films with the results of piezoresponse force mic

SUBMITTER: Chouprik A 

PROVIDER: S-EPMC9103790 | biostudies-literature | 2022 Apr

REPOSITORIES: biostudies-literature