Spectroscopic Ellipsometry Study on Tuning the Electrical and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

ABSTRACT: This work reports the ellipsometry analysis of atomic layer deposition (ALD) films of ZnO doped with Zr to determine parameters like free carrier concentration and mobility. Thin films of zinc oxide (ZnO) and Zr-doped ZnO of thickness ∼100 nm were prepared by atomic layer deposition on sapphire, SiO₂/Si(100), and Si(100) substrates. Variable-angle spectroscopic ellipsometry was used to study their optical properties in the 0.5-3.5 eV spectral range. The optical constants were accurately obtained using a model that combines Drude and Tauc-Lorentz oscillators with Bruggeman effective medium approximations, allowing the inclusion of a roughness layer in the optical model. The effect of Zr doping (ca. 1.9-4.4 atom %) was then investigated in both as-prepared samples and samples anne

SUBMITTER: Bohorquez C 

PROVIDER: S-EPMC9121516 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature