MXene based saturation organic vertical photoelectric transistors with low subthreshold swing.

ABSTRACT: Vertical transistors have attracted enormous attention in the next-generation electronic devices due to their high working frequency, low operation voltage and large current density, while a major scientific and technological challenge for high performance vertical transistor is to find suitable source electrode. Herein, an MXene material, Ti₃C₂T_x, is introduced as source electrode of organic vertical transistors. The porous MXene films take the advantage of both partially shielding effect of graphene and the direct modulation of the Schottky barrier at the mesh electrode, which significantly enhances the ability of gate modulation and reduces the subthreshold swing to 73 mV/dec. More importantly, the saturation of output current which is essential for all

SUBMITTER: Li E 

PROVIDER: S-EPMC9130145 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature