Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics.

ABSTRACT: Solution processes have been widely used to construct chalcogenide-based thin-film optoelectronic and electronic devices that combine high performance with low-cost manufacturing. However, Ge(ii)-based chalcogenide thin films possessing great potential for optoelectronic devices have not been reported using solution-based processes; this is mainly attributed to the easy oxidation of intermediate Ge(ii) to Ge(iv) in the precursor solution. Here we report solution-processed deposition of Ge(ii)-based chalcogenide thin films in the case of GeSe and GeS films by introducing hypophosphorous acid as a suitable reducing agent and strong acid. This enables the generation of Ge(ii) from low-cost and stable GeO₂ powders while suppressing the oxidation of Ge(ii) to Ge(iv) in the precursor

SUBMITTER: Hu L 

PROVIDER: S-EPMC9132017 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature