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Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics† † Electronic supplementary information (ESI) available. See https://doi.org/10.1039/d1sc07043f

ABSTRACT: Solution processes have been widely used to construct chalcogenide-based thin-film optoelectronic and electronic devices that combine high performance with low-cost manufacturing. However, Ge(ii)-based chalcogenide thin films possessing great potential for optoelectronic devices have not been reported using solution-based processes; this is mainly attributed to the easy oxidation of intermediate Ge(ii) to Ge(iv) in the precursor solution. Here we report solution-processed deposition of Ge(ii)-based chalcogenide thin films in the case of GeSe and GeS films by introducing hypophosphorous acid as a suitable reducing agent and strong acid. This enables the generation of Ge(ii) from low-cost and stable GeO2 powders while suppressing the oxidation of Ge(ii) to Ge(iv) in the precursor solution. We further show that such solution processes can also be used to deposit GeSe1−xSx alloy films with continuously tunable bandgaps ranging from 1.71 eV (GeS) to 1.14 eV (GeSe) by adjusting the atomic ratio of S- to Se-precursors in solution, thus allowing the realization of optimal-bandgap single-junction photovoltaic devices and multi-junction devices. Solution-processed Ge(ii)-based chalcogenide films are achieved by introducing hypophosphorous acid as a suitable reducing agent and strong acid and demonstrated for photovoltaic application.

SUBMITTER: Hu L

PROVIDER: S-EPMC9132017 | biostudies-literature | 2022 Apr

REPOSITORIES: biostudies-literature

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