Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks.

ABSTRACT: Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin-orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge noise and hyperfine interaction. Here, we demonstrate a scalable approach to synthesize and organize Ge nanowires on silicon (100)-oriented substrates. Germanium nanowire networks are obtained by selectively growing on nanopatterned slits in a metalorganic vapor phase epitaxy system. Low-temperature electronic transport measurements are performed on nanowire Hall bar devices revealing high hole doping of ∼10¹⁸ cm^-3 and mean free path of ∼10 nm. Quantum diffusive transport phenomena, universal conductance fluctuation

SUBMITTER: Ramanandan SP 

PROVIDER: S-EPMC9136922 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature