Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films.

ABSTRACT: Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb₂Te₃ tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material with outstanding properties is still ongoing. This search is relatively crucial for embedded memory applications where the crystallization temperature of the active material has to be higher to surpass the soldering threshold. Increasing the Ge content in the GST alloys seems promising due to the associated higher crystallization temperatures. However, homogeneous Ge-rich GST in the as-deposited condition is thermodynamically unstable, and phase separation upon annealing is unavoidable. This phase separation reduces enduran

SUBMITTER: Yimam DT 

PROVIDER: S-EPMC9143932 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature