Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO₃/SrTiO₃ heterostructures.

ABSTRACT: Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably causes the state-overlap issue, limiting the number of available states. The insufficient number of states and the resultant inaccurate weight quantization are bottlenecks in developing practical memristors. Herein, we demonstrate a resistive switching device based on Pt/LaAlO₃/SrTiO₃ (Pt/LAO/STO) heterostructures, which is suitable for multi-level memristive applications. By redistributing the surface oxygen vacancies, we precisely control the tunneling of two-dimensional elect

SUBMITTER: Lee S 

PROVIDER: S-EPMC9156742 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature