Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing.

ABSTRACT: Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS₂ memristor arrays are reported. The MoS₂ memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS₂

SUBMITTER: Tang B 

PROVIDER: S-EPMC9160094 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature