Large-Area, High-Specific-Power Schottky-Junction Photovoltaics from CVD-Grown Monolayer MoS₂.

ABSTRACT: The deployment of two-dimensional (2D) materials for solar energy conversion requires scalable large-area devices. Here, we present the design, modeling, fabrication, and characterization of monolayer MoS₂-based lateral Schottky-junction photovoltaic (PV) devices grown by using chemical vapor deposition (CVD). The device design consists of asymmetric Ti and Pt metal contacts with a work function offset to enable charge separation. These early stage devices show repeatable performance under 1 sun illumination, with V_OC of 160 mV, J_SC of 0.01 mA/cm², power conversion efficiency of 0.0005%, and specific power of 1.58 kW/kg. An optoelectronic model for this device is developed and validated with experimental results. This model is used

SUBMITTER: Islam KM 

PROVIDER: S-EPMC9164198 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature