Towards n-type conductivity in hexagonal boron nitride.

ABSTRACT: Asymmetric transport characteristic in n- and p-type conductivity has long been a fundamental difficulty in wide bandgap semiconductors. Hexagonal boron nitride (h-BN) can achieve p-type conduction, however, the n-type conductivity still remains unavailable. Here, we demonstrate a concept of orbital split induced level engineering through sacrificial impurity coupling and the realization of efficient n-type transport in 2D h-BN monolayer. We find that the O 2p_z orbital has both symmetry and energy matching to the Ge 4p_z orbital, which promises a strong coupling. The introduction of side-by-side O to Ge donor can effectively push up the donor level by the formation of another sacrificial deep level. We discover that a Ge-O₂ trimer brings the extremely shallo

SUBMITTER: Lu S 

PROVIDER: S-EPMC9166779 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature