Fabrication and Characterization of a Self-Powered n-Bi₂Se₃/p-Si Nanowire Bulk Heterojunction Broadband Photodetector.

ABSTRACT: In the present study, vacuum evaporation method is used to deposit Bi₂Se₃ film onto Si nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self-powered, its detection wavelength ranges from 390 nm to 1700 nm and its responsivity reaches its highest value of 84.3 mA/W at 390 nm. In comparison to other Bi₂Se₃/Si photodetectors previously reported, its infrared detection length is the second longest and its response speed is the third fastest. Before the fabrication of the photodetector, we optimized the growth parameter of the Bi₂Se₃ film and the best Bi₂Se₃ film with atomic steps could finally be achieved. The electrical property measurement conducted by the physical prop

SUBMITTER: Wang X 

PROVIDER: S-EPMC9182573 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature