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Doping Free and Amorphous NiOx Film via UV Irradiation for Efficient Inverted Perovskite Solar Cells.


ABSTRACT: High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high-performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant-free inorganic material, Ni3+ -rich NiOx , is reported to be fabricated by a novel UV irradiation strategy, which is facile, easily scaled-up, and energy-saving because all the processing temperatures are below 82 ℃. The as-prepared NiOx film shows highly improved conductivity and hole extraction ability. The rigid and flexible PSCs present the champion efficiencies of 22.45% and 19.7%, respectively. This work fills the gap of preparing metal oxide films at the temperature below 150 °C for inverted PSCs with the high efficiency of >22%. More importantly, this work upgrades the substantial understanding about inorganic materials to function well as efficient carrier transport layers without external doping and high crystallization.

SUBMITTER: Lian Q 

PROVIDER: S-EPMC9218651 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature

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Doping Free and Amorphous NiO<sub>x</sub> Film via UV Irradiation for Efficient Inverted Perovskite Solar Cells.

Lian Qing Q   Wang Peng-Lai PL   Wang Guoliang G   Zhang Xian X   Huang Yulan Y   Li Dongyang D   Mi Guojun G   Shi Run R   Amini Abbas A   Zhang Liang L   Cheng Chun C  

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20220425 18


High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high-performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant-free inorganic material, Ni<sup>3+</sup> -rich NiO<sub>x</sub> , is reported to be fabricated by a novel UV irradiation  ...[more]

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