Tunneling Magnetoresistance Transition and Highly Sensitive Pressure Sensors Based on Magnetic Tunnel Junctions with a Black Phosphorus Barrier.

ABSTRACT: Black phosphorus is a promising material to serve as a barrier for magnetic tunnel junctions (MTJs) due to weak van der Waals interlayer interactions. In particular, the special band features of black phosphorus may endow intriguing physical characteristics. Here we study theoretically the effect of band gap tunability of black phosphorus on the MTJs with the black phosphorus barrier. It is found that the tunneling magnetoresistance (TMR) may transition from a finite value to infinity owing to the variation in the band gap of black phosphorus. Combined with the latest experimental results of the pressure-induced band gap tunability, we further investigate the pressure effect of TMR in the MTJs with a black phosphorus barrier. The calculations show that the pressure sensitivity can be quite

SUBMITTER: Fang H 

PROVIDER: S-EPMC9219071 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature