Dielectric Properties Investigation of Metal-Insulator-Metal (MIM) Capacitors.

ABSTRACT: This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al₂O₃/TiO₂/HfO₂ dielectric-film-based metal-insulator-metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al₂O₃-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm^-2, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10^-10 A·cm

SUBMITTER: Xiong L 

PROVIDER: S-EPMC9227371 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature