Dataset Information

Acrylamide Hydrogel-Modified Silicon Nanowire Field-Effect Transistors for pH Sensing.

ABSTRACT: In this study, we report a pH-responsive hydrogel-modified silicon nanowire field-effect transistor for pH sensing, whose modification is operated by spin coating, and whose performance is characterized by the electrical curve of field-effect transistors. The results show that the hydrogel sensor can measure buffer pH in a repeatable and stable manner in the pH range of 3-13, with a high pH sensitivity of 100 mV/pH. It is considered that the swelling of hydrogel occurring in an aqueous solution varies the dielectric properties of acrylamide hydrogels, causing the abrupt increase in the source-drain current. It is believed that the design of the sensor can provide a promising direction for future biosensing applications utilizing the excellent biocompatibility of hydrogels.

SUBMITTER: Li G

PROVIDER: S-EPMC9227456 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature

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Acrylamide Hydrogel-Modified Silicon Nanowire Field-Effect Transistors for pH Sensing.

Li Gangrong G Wei Qianhui Q Wei Shuhua S Zhang Jing J Jin Qingxi Q Wang Guozhi G Hu Jiawei J Zhu Yan Y Kong Yun Y Zhang Qingzhu Q Zhao Hongbin H Wei Feng F Tu Hailing H

Nanomaterials (Basel, Switzerland) 20220616 12

In this study, we report a pH-responsive hydrogel-modified silicon nanowire field-effect transistor for pH sensing, whose modification is operated by spin coating, and whose performance is characterized by the electrical curve of field-effect transistors. The results show that the hydrogel sensor can measure buffer pH in a repeatable and stable manner in the pH range of 3-13, with a high pH sensitivity of 100 mV/pH. It is considered that the swelling of hydrogel occurring in an aqueous solution ...[more]

PMID: 35745409

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Project description:This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material such as a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric. An RFET is an innovative device that can be dynamically programmed to perform as either an n- or p-FET by applying appropriate gate potentials. In this work, an insulating 2D material, hexagonal boron nitride (hBN), is introduced as a gate dielectric and encapsulation layer around the nanowire in place of a thermally grown or atomic-layer-deposited oxide. hBN flake was mechanically exfoliated and transferred onto a silicon nanowire-based RFET device using the dry viscoelastic stamping transfer technique. The thickness of the hBN flakes was investigated by atomic force microscopy and transmission electron microscopy. The ambipolar transfer characteristics of the Si-hBN RFETs with different gating architectures showed a significant improvement in the device's electrical parameters due to the encapsulation and passivation of the nanowire with the hBN flake. Both n- and p-type characteristics measured through the top gate exhibited a reduction of hysteresis by 10-20 V and an increase in the on-off ratio (ION/IOFF) by 1 order of magnitude (up to 108) compared to the values measured for unpassivated nanowire. Specifically, the hBN encapsulation provided improved electrostatic top gate coupling, which is reflected in the enhanced subthreshold swing values of the devices. For a single nanowire, an improvement up to 0.97 and 0.5 V/dec in the n- and p-conduction, respectively, is observed. Due to their dynamic switching and polarity control, RFETs boast great potential in reducing the device count, lowering power consumption, and playing a crucial role in advanced electronic circuitry. The concept of mixed-dimensional RFET could further strengthen its functionality, opening up new pathways for future electronics.

Dataset Information

Acrylamide Hydrogel-Modified Silicon Nanowire Field-Effect Transistors for pH Sensing.

Publications

Acrylamide Hydrogel-Modified Silicon Nanowire Field-Effect Transistors for pH Sensing.

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