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Memristive Cluster Based Compact High-Density Nonvolatile Memory Design and Application for Image Storage.

ABSTRACT: As a new type of nonvolatile device, the memristor has become one of the most promising technologies for designing a new generation of high-density memory. In this paper, a 4-bit high-density nonvolatile memory based on a memristor is designed and applied to image storage. Firstly, a memristor cluster structure consisting of a transistor and four memristors is designed. Furthermore, the memristor cluster is used as a memory cell in the crossbar array structure to realize the memory design. In addition, when the designed non-volatile memory is applied to gray scale image storage, only two memory cells are needed for the storage of one pixel. Through the Pspice circuit simulation, the results show that compared with the state-of-the-art technology, the memory designed in this paper has better storage density and read-write speed. When it is applied to image storage, it achieves the effect of no distortion and fast storage.

SUBMITTER: Sun J

PROVIDER: S-EPMC9229067 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature

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Memristive Cluster Based Compact High-Density Nonvolatile Memory Design and Application for Image Storage.

Sun Jingru J Jiang Meiqi M Zhou Qi Q Wang Chunhua C Sun Yichuang Y

Micromachines 20220528 6

As a new type of nonvolatile device, the memristor has become one of the most promising technologies for designing a new generation of high-density memory. In this paper, a 4-bit high-density nonvolatile memory based on a memristor is designed and applied to image storage. Firstly, a memristor cluster structure consisting of a transistor and four memristors is designed. Furthermore, the memristor cluster is used as a memory cell in the crossbar array structure to realize the memory design. In ad ...[more]

PMID: 35744459

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Project description:Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

Project description:In view of the growing volume of data, there is a notable research focus on hardware that offers high computational performance with low power consumption. Notably, neuromorphic computing, particularly when utilizing CMOS-based hardware, has demonstrated promising research outcomes. Furthermore, there is an increasing emphasis on the utilization of emerging synapse devices, such as non-volatile memory (NVM), with the objective of achieving enhanced energy and area efficiency. In this context, we designed a hardware system that employs memristors, a type of emerging synapse, for a 1T1R synapse. The operational characteristics of a memristor are dependent upon its configuration with the transistor, specifically whether it is located at the source (MOS) or the drain (MOD) of the transistor. Despite its importance, the determination of the 1T1R configuration based on the operating voltage of the memristor remains insufficiently explored in existing studies. To enable seamless array expansion, it is crucial to ensure that the unit cells are properly designed to operate reliably from the initial stages. Therefore, this relationship was investigated in detail, and corresponding design rules were proposed. SPICE model based on fabricated memristors and transistors was utilized. Using this model, the optimal transistor selection was determined and subsequently validated through simulation. To demonstrate the learning capabilities of neuromorphic computing, an SNN inference accelerator was implemented. This implementation utilized a 1T1R array constructed based on the validated 1T1R model developed during the process. The accuracy was evaluated using a reduced MNIST dataset. The results verified that the neural network operations inspired by brain functionality were successfully implemented in hardware with high precision and no errors. Additionally, traditional ADC and DAC, commonly used in DNN research, were replaced with DPI and LIF neurons, resulting in a more compact design. The design was further stabilized by leveraging the low-pass filter effect of the DPI circuit, which effectively mitigated noise.

Dataset Information

Memristive Cluster Based Compact High-Density Nonvolatile Memory Design and Application for Image Storage.

Publications

Memristive Cluster Based Compact High-Density Nonvolatile Memory Design and Application for Image Storage.

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