Effect of Substrate-RF on Sub-200 nm Al_0.7Sc_0.3N Thin Films.

ABSTRACT: Sc-doped aluminum nitride is emerging as a new piezoelectric material which can substitute undoped aluminum nitride (AlN) in radio-frequency MEMS applications, thanks to its demonstrated enhancement of the piezoelectric coefficients. Furthermore, the recent demonstration of the ferroelectric-switching capability of the material gives AlScN the possibility to integrate memory functionalities in RF components. However, its high-coercive field and high-leakage currents are limiting its applicability. Residual stress, growth on different substrates, and testing-temperature have already been demonstrated as possible knobs to flatten the energy barrier needed for switching, but no investigation has been reported yet on the whole impact on the dielectric and ferroelectric dynamic behavior of a si

SUBMITTER: Pirro M 

PROVIDER: S-EPMC9230010 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature