Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.

ABSTRACT: The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO₂ substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs

SUBMITTER: Dvoretckaia L 

PROVIDER: S-EPMC9230727 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature