Layer-by-layer epitaxy of multi-layer MoS₂ wafers.

ABSTRACT: The 2D semiconductor of MoS₂ has great potential for advanced electronics technologies beyond silicon. So far, high-quality monolayer MoS₂ wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer. However, achieving high-quality multi-layer MoS₂ wafers remains a challenge. Here we report the growth of high-quality multi-layer MoS₂ 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six. Systematic evalua

SUBMITTER: Wang Q 

PROVIDER: S-EPMC9232293 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature