Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.

ABSTRACT: For neuromorphic computing and high-density data storage memory, memristive devices have recently gained a lot of interest. So far, memristive devices have suffered from switching parameter instability, such as distortions in resistance values of low- and high-resistance states (LRSs and HRSs), dispersion in working voltage (set and reset voltages), and a small ratio of high and low resistance, among other issues. In this context, interface engineering is a critical technique for addressing the variation issues that obstruct the use of memristive devices. Herein, we engineered a high band gap, low Gibbs free energy Al₂O₃ interlayer between the HfO₂ switching layer and the tantalum oxy-nitride electrode (TaN) bottom electrode to operate as an oxygen reservoi

SUBMITTER: Ismail M 

PROVIDER: S-EPMC9232664 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature