Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning.

ABSTRACT: Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating from the semiconductors interact with defects in the surrounding insulators. In field-effect transistors, the resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide) are used, hindering stable circuit operation. Here, we show that device stability in graphene-based field-effect transistors with amorphous gate oxides can be improved by Fermi-level tuning. We deliberately tune the Fermi level of the channel to maximize the energy distance between the charge carriers in the channel and the defect bands in the amorphous aluminium gate oxide. Charge trapping is

SUBMITTER: Knobloch T 

PROVIDER: S-EPMC9236902 | biostudies-literature | 2022

REPOSITORIES: biostudies-literature