Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics.

ABSTRACT: Using the excess energy of charge carriers excited above the band edge (hot carriers) could pave the way for optoelectronic devices, such as photovoltaics exceeding the Shockley-Queisser limit or ultrafast photodetectors. Semiconducting nanowires show promise as a platform for hot-carrier extraction. Proof of principle photovoltaic devices have already been realized based on InAs nanowires, using epitaxially defined InP segments as energy filters that selectively transmit hot electrons. However, it is not yet fully understood how charge-carrier separation, relaxation, and recombination depend on device design and on the location of optical excitation. Here, we introduce the use of an optical-beam-induced current (OBIC) characterization method, employing a laser beam focused close to the di

SUBMITTER: Fast J 

PROVIDER: S-EPMC9245483 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature