Ultra-wide bandgap semiconductor Ga₂O₃ power diodes.

ABSTRACT: Ultra-wide bandgap semiconductor Ga₂O₃ based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga₂O₃ material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga₂O₃ heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga₂O₃, bipolar transport can induce conductivity modulation and low resistance in a low doping Ga₂

SUBMITTER: Zhang J 

PROVIDER: S-EPMC9259626 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature