Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN).

ABSTRACT: Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al-Au nanogap electrodes (<15 nm), patterned via adhesion lithography. The abundant CuSCN material is doped with the molecular p-type dopant fluorofullerene C₆₀F₄₈

SUBMITTER: Georgiadou DG 

PROVIDER: S-EPMC9264318 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature