Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer.

ABSTRACT: In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al₂O₃-based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al₂O₃/IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400-900 nm. In addition, the Al₂O₃/IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure-Al₂O₃/IZO transparent memory. The fabricated Al₂O₃/IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al₂

SUBMITTER: Park J 

PROVIDER: S-EPMC9284630 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature