Substantially Enhanced Properties of 2D WS₂ by High Concentration of Erbium Doping against Tungsten Vacancy Formation.

ABSTRACT: Doping in 2D materials is an important method for tuning of band structures. For this purpose, it is important to develop controllable doping techniques. Here, we demonstrate a substitutional doping strategy by erbium (Er) ions in the synthesis of monolayer WS₂ by chemical vapor deposition. Substantial enhancements in photoluminescent and photoresponsive properties are achieved, which indicate a tungsten vacancy suppression mechanism by Er filling. Er ion doping in the monolayer WS₂ is proved by X-ray diffraction (XRD) and X-ray photoelectron spectra (XPS), fluorescence, absorption, excitation, and Raman spectra. 11.5 at% of the maximum Er concentration is examined by energy dispersive X-ray spectroscopy (EDX). Over 6 times enhancement of intensities with 7.9 nm redsh

SUBMITTER: Zhao H 

PROVIDER: S-EPMC9285636 | biostudies-literature | 2022

REPOSITORIES: biostudies-literature