The non-volatile electrostatic doping effect in MoTe₂ field-effect transistors controlled by hexagonal boron nitride and a metal gate.

ABSTRACT: The electrical and optical properties of transition metal dichalcogenides (TMDs) can be effectively modulated by tuning their Fermi levels. To develop a carrier-selectable optoelectronic device, we investigated intrinsically p-type MoTe₂, which can be changed to n-type by charging a hexagonal boron nitride (h-BN) substrate through the application of a writing voltage using a metal gate under deep ultraviolet light. The n-type part of MoTe₂ can be obtained locally using the metal gate pattern, whereas the other parts remain p-type. Furthermore, we can control the transition rate to n-type by applying a different writing voltage (i.e., - 2 to - 10 V), where the n-type characteristics become saturated beyond a certain writing voltage. Thus, MoTe₂ was electrost

SUBMITTER: Khan MA 

PROVIDER: S-EPMC9287407 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature