Carbon-dot doped, transfer-free, low-temperature, high mobility graphene using microwave plasma CVD.

ABSTRACT: Microwave plasma chemical vapor deposition is a well-known method for low-temperature, large-area direct graphene growth on any insulating substrate without any catalysts. However, the quality has not been significantly better than other graphene synthesis methods such as thermal chemical vapor deposition, thermal decomposition of SiC, etc. Moreover, the higher carrier mobility in directly grown graphene is much desired for industrial applications. Here, we report chemical doping of graphene (grown on silicon using microwave plasma chemical vapor deposition) with carbon dots to increase the mobility to a range of 363-398 cm² V^-1 s^-1 (1 × 1 cm van der Pauw devices were fabricated) stable for more than 30 days under normal atmospheric conditions, which

SUBMITTER: Mewada A 

PROVIDER: S-EPMC9288858 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature