Highly-stable flexible pressure sensor using piezoelectric polymer film on metal oxide TFT.

ABSTRACT: In this study, a flexible pressure sensor with highly stable performance is presented. The pressure sensor was fabricated to work under low voltage conditions by using a high mobility amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) and a stretched polyvinylidene fluoride (PVDF) film. To prepare a stable sensor suitable for practical use, we designed a device structure that shields ambient noise by grounding the control gate. The shielding structure significantly improves the stability of the device. Moreover, the sensor was fabricated on a flexible substrate and delaminated via a laser lift-off (LLO) technique to meet the urgent needs for flexibility. The pressure sensor showed good sensitivity and reliability over a pressure ranging from 0 to 75 kPa which co

SUBMITTER: Jin T 

PROVIDER: S-EPMC9301630 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature