Performance Improvement with an Ultrathin p-Type Interfacial Layer in n-Type Vertical Organic Field-Effect Transistors Based on Reduced Graphene Oxide Electrode.

ABSTRACT: Vertical organic field-effect transistors (VOFETs) with a large current on/off ratio and easy fabrication process are highly desirable for future organic electronics. In this paper, we proposed an ultrathin p-type copper (II) phthalocyanine (CuPc) interfacial layer in reduced graphene oxide (rGO)-based VOFETs. The CuPc interfacial layer was sandwiched between the rGO electrode and the N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C₈) organic layer. The introduced CuPc interfacial layer not only decreased the off-current density of the device but also slightly enhanced the on-current density. The threshold voltage of the device was also effectively improved and stabilized at around 0 V. The obtained device exhibited a current on/off ratio exceeding 10⁶

SUBMITTER: Qiao K 

PROVIDER: S-EPMC9301728 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature