Epitaxial Growth of Crystalline CaF₂ on Silicene.

ABSTRACT: Silicene is one of the most promising two-dimensional (2D) materials for the realization of next-generation electronic devices, owing to its high carrier mobility and band gap tunability. To fully control its electronic properties, an external electric field needs to be applied perpendicularly to the 2D lattice, thus requiring the deposition of an insulating layer that directly interfaces silicene, without perturbing its bidimensional nature. A promising material candidate is CaF₂, which is known to form a quasi van der Waals interface with 2D materials as well as to maintain its insulating properties even at ultrathin scales. Here we investigate the epitaxial growth of thin CaF₂ layers on different silicene phases by means of molecular beam epitaxy. Through electron

SUBMITTER: Nazzari D 

PROVIDER: S-EPMC9305960 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature