Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer.

ABSTRACT: The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it still suffers a high operation voltage (tens of volts) due to the Fowler-Nordheim tunnelling mechanism. It is still a great challenge to realize ultrafast nonvolatile storage with low operation voltage. Here we propose a floating-gate memory with a structure of MoS₂/hBN/MoS₂/graphdiyne oxide/WSe₂, in which a threshold switching layer, graphdiyne oxide, instead of a dielectric blocking layer in conventional floating-gate memories, is used to connect the floating

SUBMITTER: Li Y 

PROVIDER: S-EPMC9357017 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature