Stoichiometry and Morphology Analysis of Thermally Deposited V₂O_5-x Thin Films for Si/V₂O_5-x Heterojunction Solar Cell Applications.

ABSTRACT: In recent decades, dopant-free Si-based solar cells with a transition metal oxide layer have gained noticeable research interest as promising candidates for next-generation solar cells with both low manufacturing cost and high power conversion efficiency. Here, we report the effect of the substrate temperature for the deposition of vanadium oxide (V₂O_5-x, 0 ≤ X ≤ 5) thin films (TFs) for enhanced Si surface passivation. The effectiveness of SiO_x formation at the Si/V₂O_5-x interface for Si surface passivation was investigated by comparing the results of minority carrier lifetime measurements, X-ray photoelectron spectroscopy, and atomic force microscopy. We successfully demonstrated that the deposition temperature of V₂O₅

SUBMITTER: Jeong GS 

PROVIDER: S-EPMC9369836 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature