High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier.

ABSTRACT: Achieving high-efficient spin injection in semiconductors is critical for developing spintronic devices. Although a tunnel spin injector is typically used, the construction of a high-quality tunnel barrier remains a significant challenge due to the large lattice mismatch between oxides and semiconductors. In this work, van der Waals h-BN films with the atomically flat interface were engaged as the tunnel barrier to achieve high spin polarization in GaN, and the spin injection and transport in GaN were investigated systematically. Based on the Hanle precession and magnetic resistance measurements, CoFeB was determined as an optimal spin polarizer, bilayer h-BN tunnelling barrier was proven to yield a much higher spin polarization than the case of monolayer, and appropriate carrier concentra

SUBMITTER: Lin D 

PROVIDER: S-EPMC9378808 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature