Effect of electronic doping and traps on carrier dynamics in tin halide perovskites.

ABSTRACT: Tin halide perovskites have recently emerged as promising materials for low band gap solar cells. Much effort has been invested on controlling the limiting factors responsible for poor device efficiencies, namely self-p-doping and tin oxidation. Both phenomena are related to the presence of defects; however, full understanding of their implications in the optoelectronic properties of the material is still missing. We provide a comprehensive picture of the competing radiative and non-radiative recombination processes in tin-based perovskite thin films to establish the interplay between doping and trapping by combining photoluminescence measurements with trapped-carrier dynamic simulations and first-principles calculations. We show that pristine Sn perovskites, i.e. sample processed w

SUBMITTER: Treglia A 

PROVIDER: S-EPMC9390658 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature