Terahertz multi-level nonvolatile optically rewritable encryption memory based on chalcogenide phase-change materials.

ABSTRACT: Fast and efficient information processing and encryption, including writing, reading, and encryption memory, is essential for upcoming terahertz (THz) communications and information encryption. Here, we demonstrate a THz multi-level, nonvolatile, optically rewritable memory and encryption memory based on chalcogenide phase-change materials, Ge₂Sb₂Te₅ (GST). By tuning the laser fluence irradiated on GST, we experimentally achieve multiple intermediate states and large-area amorphization with a diameter of centimeter-level in the THz regime. Our memory unit features a high operating speed of up to 4 ns, excellent reproducibility, and long-term stability. Utilizing this approach, hexadecimal coding information memories are implemented, and multiple writing-era

SUBMITTER: Zhang S 

PROVIDER: S-EPMC9391584 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature