Inelastic phonon transport across atomically sharp metal/semiconductor interfaces.

ABSTRACT: Understanding thermal transport across metal/semiconductor interfaces is crucial for the heat dissipation of electronics. The dominant heat carriers in non-metals, phonons, are thought to transport elastically across most interfaces, except for a few extreme cases where the two materials that formed the interface are highly dissimilar with a large difference in Debye temperature. In this work, we show that even for two materials with similar Debye temperatures (Al/Si, Al/GaN), a substantial portion of phonons will transport inelastically across their interfaces at high temperatures, significantly enhancing interface thermal conductance. Moreover, we find that interface sharpness strongly affects phonon transport process. For atomically sharp interfaces, phonons are allowed to transport ine

SUBMITTER: Li Q 

PROVIDER: S-EPMC9392776 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature