Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.

ABSTRACT: GaN-on-diamond is a promising route towards reliable high-power transistor devices with outstanding performances due to better heat management, replacing common GaN-on-SiC technologies. Nevertheless, the implementation of GaN-on-diamond remains challenging. In this work, the selective area growth of GaN nanostructures on cost-efficient, large-scale available heteroepitaxial diamond (001) substrates by means of plasma-assisted molecular beam epitaxy is investigated. Additionally, we discuss the influence of an AlN buffer on the morphology of the GaN nanostructures. The nanowires and nanofins are characterized by a very high selectivity and controllable dimensions. Low temperature photoluminescence measurements are used to evaluate their structural quality. The growth of two GaN crystal doma

SUBMITTER: Pantle F 

PROVIDER: S-EPMC9417268 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature