Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization.

ABSTRACT: Both gain medium design and cavity geometry are known to be important for low threshold operation of semiconductor nanowire lasers. For many applications nanowire lasers need to be transferred from the growth substrate to a low-index substrate; however, the impact of the transfer process on optoelectronic performance has not been studied. Ultrasound, PDMS-assisted and mechanical rubbing are the most commonly used methods for nanowire transfer; each method may cause changes in the fracture point of the nanowire which can potentially affect both length and end-face mirror quality. Here we report on four common approaches for nanowire transfer. Our results show that brief ultrasound and PDMS-assisted transfer lead to optimized optoelectronic performance, as confirmed by ensemble median lasing

SUBMITTER: Alanis JA 

PROVIDER: S-EPMC9417496 | biostudies-literature | 2019 Nov

REPOSITORIES: biostudies-literature