Enhancing the light emission of GaAs nanowires by pressure-modulated charge transfer.

ABSTRACT: Strong non-radiative surface recombination in GaAs nanowires heavily blocks their applications as nanoscale optoelectronic devices. Pressure can effectively affect the surface recombination behaviors through tuning interactions between the surface of nanomaterials and the medium environment. Here, we report the pressure-induced light emission enhancement in GaAs nanowires via in situ high pressure photoluminescence measurements with nitrogen as the pressure transmitting medium. In the pressure range from 0 to 2.2 GPa, the photoluminescence intensity dramatically increases with increasing pressure. Above 2.2 GPa, the band gap transition from direct to indirect results in a sudden decrease in the photoluminescence intensity. Photoluminescence enhancement in GaAs nanowires also shows t

SUBMITTER: Ma L 

PROVIDER: S-EPMC9417809 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature