Ultrafast photoresponse of vertically oriented TMD films probed in a vertical electrode configuration on Si chips.

ABSTRACT: Integrated photodetectors based on transition metal dichalcogenides (TMDs) face the challenge of growing their high-quality crystals directly on chips or transferring them to the desired locations of components by applying multi-step processes. Herein, we show that vertically oriented polycrystalline thin films of MoS₂ and WS₂ grown by sulfurization of Mo and W sputtered on highly doped Si are robust solutions to achieve on-chip photodetectors with a sensitivity of up to 1 mA W^-1 and an ultrafast response time in the sub-μs regime by simply probing the device in a vertical arrangement, i.e., parallel to the basal planes of TMDs. These results are two orders of magnitude better than those measured earlier in lateral probing setups having both electrod

SUBMITTER: Jarvinen T 

PROVIDER: S-EPMC9417830 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature