Schottky barrier lowering due to interface states in 2D heterophase devices.

ABSTRACT: The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic configuration in the interface, and impurity doping. We show that also the presence of interface states at 2D metal-semiconductor junctions can give rise to a large renormalization of the effective Schottky barrier determined from the temperature dependence of the current. We investigate the charge transport in n- and p-doped monolayer MoTe₂ 1T'-1H junctions using ab initio quantum transport calculations. The Schottky barriers are extracted both from the projected density of states and the transmission spectrum, and by simulating the IT-char

SUBMITTER: Jelver L 

PROVIDER: S-EPMC9418679 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature