Nonlinear ion drift-diffusion memristance description of TiO₂ RRAM devices.

ABSTRACT: The nature and direction of the hysteresis in memristive devices is critical to device operation and performance and the ability to realise their potential in neuromorphic applications. TiO₂ is a prototypical memristive device material and is known to show hysteresis loops with both clockwise switching and counter-clockwise switching and in many instances evidence of negative differential resistance (NDR) behaviour. Here we study the electrical response of a device composed of a single nanowire channel Au-Ti/TiO₂/Ti-Au both in air and under vacuum and simulate the I-V characteristics in each case using the Schottky barrier and an ohmic-like transport memristive model which capture nonlinear diffusion and migration of ions within the wire. The dynamics of

SUBMITTER: Alialy S 

PROVIDER: S-EPMC9419089 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature