Low-temperature synthesis of 2D anisotropic MoTe₂ using a high-pressure soft sputtering technique.

ABSTRACT: We demonstrate a high-pressure soft sputtering technique that can grow large area 1T' phase MoTe₂ sheets on HOPG and Al₂O₃ substrates at temperatures as low as 300 °C. The results show that a single Mo/Te co-sputtering step on heated substrates produces highly defected films as a result of the low Te sticking coefficient. The stoichiometry is significantly improved when a 2-step technique is used, which first co-sputters Mo and Te onto an unheated substrate and then anneals the deposited material to crystalize it into 1T' phase MoTe₂. A MoTe_2-x 1T' film with the lowest Te vacancy content (x = 0.14) was synthesized using a 300 °C annealing step, but a higher processing temperature was prohibited due to MoTe₂ dec

SUBMITTER: Yumigeta K 

PROVIDER: S-EPMC9419816 | biostudies-literature | 2020 Apr

REPOSITORIES: biostudies-literature