Rectifying optoelectronic memory based on WSe₂/graphene heterostructures.

ABSTRACT: van der Waals heterostructures composed of two-dimensional materials vertically stacked have been extensively studied to develop various multifunctional devices. Here, we report WSe₂/graphene heterostructure devices with a top floating gate that can serve as multifunctional devices. They exhibit gate-controlled rectification inversion, rectified nonvolatile memory effects, and multilevel optoelectronic memory effects. Depending on the polarity of the gate voltage pulses (V _Gp), electrons or holes can be trapped in the floating gate, resulting in rectified nonvolatile memory properties. Furthermore, upon repeated illumination with laser pulses, positive or negative staircase photoconductivity is observed depending on the history of V _Gp, which

SUBMITTER: Kim SH 

PROVIDER: S-EPMC9419859 | biostudies-literature | 2021 Aug

REPOSITORIES: biostudies-literature